dat a sheet product specification june 2001 discrete semiconductors bt138 series triacs
nxp semiconductors product specification triacs bt138 series general description quick reference data passivated triacs in a plastic envelope, symbol parameter max. max. unit intended for use in applications requiring high bidirectional transient and blocking bt138- 600 800 voltage capability and high thermal bt138- 600f 800f cycling performance. typical bt138- 600g 800g applications include motor control, v drm repetitive peak off-state 600 800 v industrial and domestic lighting, heating voltages and static switching. i t(rms) rms on-state current 12 12 a i tsm non-repetitive peak on-state 95 95 a current pinning - to220ab pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -600 -800 v drm repetitive peak off-state - 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t mb 99 ?c - 12 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 95 a t = 16.7 ms - 105 a i 2 ti 2 t for fusing t = 10 ms - 45 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/s triggering t2+ g+ - 50 a/s t2+ g- - 50 a/s t2- g- - 50 a/s t2- g+ - 10 a/s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 123 tab 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/s. june 2001 1 rev 1.400
nxp semiconductors product specification triacs bt138 series thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance full cycle - - 1.5 k/w junction to mounting base half cycle - - 2.0 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt138- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 10 35 25 50 ma t2- g+ - 22 70 70 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 7 40 40 60 ma t2+ g- - 20 60 60 90 ma t2- g- - 8 40 40 60 ma t2- g+ - 10 60 60 90 ma i h holding current v d = 12 v; i gt = 0.1 a - 6 30 30 60 ma v t on-state voltage i t = 15 a - 1.4 1.65 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt138- ... ...f ...g dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 100 50 200 250 - v/ s off-state voltage t j = 125 ?c; exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; - - 10 20 - v/ s commutating voltage i t(rms) = 12 a; di com /dt = 5.4 a/ms; gate open circuit t gt gate controlled turn-on i tm = 16 a; v d = v drm(max) ;- - - 2 - s time i g = 0.1 a; di g /dt = 5 a/s june 2001 2 rev 1.400
nxp semiconductors product specification triacs bt138 series fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 99?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 0 5 10 15 20 = 180 120 90 60 30 it(rms) / a ptot / w tmb(max) / c 125 117.5 110 102.5 95 1 -50 0 50 100 150 0 5 10 15 bt138 99 c tmb / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 5 10 15 20 25 surge duration / s it(rms) / a 1 10 100 1000 0 20 40 60 80 100 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) june 2001 3 rev 1.400
nxp semiconductors product specification triacs bt138 series fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.175 v rs = 0.0316 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d bidirectional unidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 5.4 9.1 tj / c 7 dv/dt (v/us) 4.2 dicom/dt = 15 a/ms 12 off-state dv/dt limit bt138...g series bt138 series bt138...f series june 2001 4 rev 1.400
nxp semiconductors product specification triacs bt138 series mechanical data dimensions in mm net mass: 2 g fig.13. sot78 (to220ab). pin 2 connected to mounting base. notes 1. refer to mounting instructions for sot78 (to220) envelopes. 2. epoxy meets ul94 v0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min june 2001 5 rev 1.400
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